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One of the most important issues in modern condensed matter physics is the realization of fractionalized excitations, such as the Majorana excitations in the Kitaev quantum spin liquid. To this aim, the 3d-based Kitaev material Na₂Co₂TeO₆ is a promising candidate whose magnetic phase diagram of B // a* contains a field-induced intermediate magnetically disordered phase within 7.5 T < |B| < 10 T. The experimental observations, including the restoration of the crystalline point group symmetry in the angle-dependent torque and the coexisting magnon excitations and spinon-continuum in the inelastic neutron scattering spectrum, provide strong evidence that this disordered phase is a field induced quantum spin liquid with partially polarized spins. Our variational Monte Carlo simulation with the effective K-J₁-Γ-Γ'-J₃ model reproduces the experimental data and further supports this conclusion. 

ScAlMgO4 (SAM) is a promising substrate material for group III-nitride semiconductors. SAM has a lower lattice mismatch with III-nitride materials compared to conventionally used sapphire (Al2O3) and silicon substrates. Bulk SAM substrate has the issues of high cost and lack of large area substrates. Utilizing solid-phase epitaxy to transform an amorphous SAM on a sapphire substrate into a crystalline form is a cost-efficient and scalable approach. Amorphous SAM layers were deposited on 0001-oriented Al2O3 by sputtering and crystallized by annealing at a temperature greater than 850 °C. Annealing under suboptimal annealing conditions results in a larger volume fraction of a competing spinel phase (MgAl2O4) exhibiting themselves as crystal facets on the subsequently grown InGaN layers during MOCVD growth. InGaN on SAM layers demonstrated both a higher intensity and emission redshift compared to the co-loaded InGaN on GaN on sapphire samples, providing a promising prospect for achieving efficient longer-wavelength emitters. 

UV‐ranged micro‐LEDs are being explored for numerous applications due to their high stability and power efficiency. However, previous reports have shown reduced external quantum efficiency (EQE) and increased leakage current due to the increase in surface‐to‐volume ratio with a decrease in the micro‐LED size. Herein, the size‐related performance for UV‐A micro‐LEDs, ranging from 8 × 8 to 100 × 100 μm², is studied. These devices exhibit reduced leakage current with the implementation of atomic layer deposition‐based sidewall passivation. A systematic EQE comparison is performed with minimal leakage current and a size‐independent on‐wafer EQE of around 5.5% is obtained. Smaller sized devices experimentally show enhanced EQE at high current density due to their improved heat dissipation capabilities. To the best of authors’ knowledge, this is the highest reported on‐wafer EQE demonstrated in <10 μm dimensioned 368 nm UV LEDs. 

Single-atom metal embedded in nitrogen-doped carbon show high HER performance, with Co-NAC reaching 200 mA cm⁻²at 310 mV overpotential.